Electrical characterisation of horizontal and vertical gate-all-around Si/SiGe nanowires field effect transistors

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http://hal.univ-grenoble-alpes.fr/hal-01991871
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Submitted on : Thursday, January 24, 2019 - 10:27:54 AM
Last modification on : Tuesday, November 5, 2019 - 2:32:14 PM

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B. Salem, G. Rosaz, N. Pauc, P. Gentile, P. Periwal, et al.. Electrical characterisation of horizontal and vertical gate-all-around Si/SiGe nanowires field effect transistors. 2014 Silicon Nanoelectronics Workshop (SNW), Jun 2014, Honolulu, United States. pp.1-2, ⟨10.1109/SNW.2014.7348570⟩. ⟨hal-01991871⟩

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