Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

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hal-01947798 , version 1 (07-12-2018)

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Q. Durlin, J.P. Perez, L. Cerutti, J.B. Rodriguez, T. Cerba, et al.. Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate. QSIP2018, Jun 2018, Stockholm, Sweden. pp.39-43, ⟨10.1016/j.infrared.2018.10.006⟩. ⟨hal-01947798⟩
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