Hole Fermi surface in Bi2Se3 probed by quantum oscillations

Abstract : Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi2Se3 crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between 0◦ and 90◦, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross sections down to 24 meV. There is therefore no signature of a camelback in the valence band of our bulk samples, in accordance with the direct band gap predicted by GW calculations.
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B.A. Piot, Wilfried Desrat, D. K. Maude, M. Orlita, M. Potemski, et al.. Hole Fermi surface in Bi2Se3 probed by quantum oscillations. Physical Review B : Condensed matter and materials physics, American Physical Society, 2016, 93 (15), pp.155206. ⟨10.1103/PhysRevB.93.155206⟩. ⟨hal-01924991⟩

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