Hole Fermi surface in Bi2Se3 probed by quantum oscillations

Abstract : Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi2Se3 crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between 0◦ and 90◦, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross sections down to 24 meV. There is therefore no signature of a camelback in the valence band of our bulk samples, in accordance with the direct band gap predicted by GW calculations.
Complete list of metadatas

Cited literature [32 references]  Display  Hide  Download

Contributor : L2c Aigle <>
Submitted on : Wednesday, June 12, 2019 - 3:08:35 PM
Last modification on : Friday, September 20, 2019 - 9:48:02 AM


Files produced by the author(s)



B.A. Piot, Wilfried Desrat, D. K. Maude, M. Orlita, M. Potemski, et al.. Hole Fermi surface in Bi2Se3 probed by quantum oscillations. Physical Review B : Condensed matter and materials physics, American Physical Society, 2016, 93 (15), pp.155206. ⟨10.1103/PhysRevB.93.155206⟩. ⟨hal-01924991⟩



Record views


Files downloads