D. Palatinus, P. Jacob, M. Cuvillier, W. Klementov, L. D. Sinkler et al., Structure refinement from precession electron diffraction data, Acta Crystallographica Section A Foundations of Crystallography, vol.57, issue.2, p.171, 2013.
DOI : 10.1107/S010876731204946X

L. Rouviere, A. Ech-e, Y. Martin, T. Denneulin, and D. Cooper, Improved strain precision with high spatial resolution using nanobeam precession electron diffraction, Applied Physics Letters, vol.103, issue.24, p.241913, 2013.
DOI : 10.1063/1.4829154

L. D. Liao and . Marks, On the alignment for precession electron diffraction, Ultramicroscopy, vol.117, pp.1-6, 2012.
DOI : 10.1016/j.ultramic.2012.03.021

D. Nicolopoulos, E. Bultreys, and . Rauch, Methods and Devices for High Throughput Crystal Structure Analysis by Electron Diffraction, p.52289, 2010.

A. Beche, J. L. Rouviere, L. Clement, and J. M. Hartmann, Improved precision in strain measurement using nanobeam electron diffraction, Applied Physics Letters, vol.95, issue.12, p.123114, 2009.
DOI : 10.1063/1.3224886

O. Faugeras, Three-Dimensional Computer Vision, 1993.

J. Peli, Contrast in complex images, Journal of the Optical Society of America A, vol.7, issue.10, pp.2032-2040, 1990.
DOI : 10.1364/JOSAA.7.002032

H. Baumann, High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope, Applied Physics Letters, vol.104, issue.26, p.262102, 2014.
DOI : 10.1063/1.4886137

A. Schneider, W. S. Rasband, and K. W. Eliceiri, NIH Image to ImageJ: 25 years of image analysis, Nature Methods, vol.42, issue.7, pp.671-675, 2012.
DOI : 10.1038/nmeth.2089

F. P. Bolte and . Cordelières, A guided tour into subcellular colocalization analysis in light microscopy, Journal of Microscopy, vol.56, issue.3, pp.213-232, 2006.
DOI : 10.1016/S0014-5793(03)00521-0
URL : https://hal.archives-ouvertes.fr/hal-00132481

L. Rouvière and E. Sarigiannidou, Theoretical discussions on the geometrical phase analysis, Ultramicroscopy, vol.106, issue.1, pp.1-17, 2005.
DOI : 10.1016/j.ultramic.2005.06.001

T. Cipro, M. Baron, J. Martin, S. Moeyaert, V. David et al., Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300???mm wafers for next generation non planar devices, Applied Physics Letters, vol.104, issue.26, p.262103, 2014.
DOI : 10.1063/1.4886404

S. H. Takagi, M. Kim, R. Yokoyama, N. Zhang, Y. Taoka et al., High mobility CMOS technologies using III???V/Ge channels on Si platform, Solid-State Electronics, vol.88, pp.2-8, 2013.
DOI : 10.1016/j.sse.2013.04.020

M. Czornomaz, M. Kazzi, D. Hopstaken, P. Caimi, C. M?-achler et al., CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs, Solid-State Electronics, vol.74, pp.71-76, 2012.
DOI : 10.1016/j.sse.2012.04.014