Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

Matthieu Vigouroux 1, 2 V. Delaye 2 N. Bernier 2 R. Cipro 3 D. Lafond 2 G. Audoit 2 T. Baron. 3 J.L. Rouvière 4 M. Martin 3 Bernard Chenevier 1 F. Bertin 2
1 LMGP - Laboratoire des matériaux et du génie physique
2 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
3 LTM - Laboratoire des technologies de la microélectronique
4 LEMMA - Laboratoire d'Etude des Matériaux par Microscopie Avancée
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
Abstract : Precession electron diffraction is an efficient technique to measure strain in nanostructures by precessing the electron beam, while maintaining a few nanometre probe size. Here, we show that an advanced diffraction pattern treatment allows reproducible and precise strain measurements to be obtained using a default 512 x 512 DigiSTAR off-axis camera both in advanced or non-corrected transmission electron microscopes. This treatment consists in both projective geometry correction of diffraction pattern distortions and strain Delaunay triangulation based analysis. Precision in the strain measurement is improved and reached 2.7 x 10(-4) with a probe size approaching 4.2 nm in diameter. This method is applied to the study of the strain state in InGaAs quantum-well (QW) devices elaborated on Si substrate. Results show that the GaAs/Si mismatch does not induce in-plane strain fluctuations in the InGaAs QW region. (C) 2014 AIP Publishing LLC.
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Matthieu Vigouroux, V. Delaye, N. Bernier, R. Cipro, D. Lafond, et al.. Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera. Applied Physics Letters, American Institute of Physics, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩. ⟨hal-01103079⟩

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